Friday, February 1, 2008

Faster flash from Micron and Intel

Flash is fast--and could be faster.

Running up to five times faster, a new flash memory architecture from Microsoft and Intel increases the data transfer rates in consumer electronics by cutting the bottlenecks affecting conventional NAND flash memory.

IM Flash Technologies, a joint venture between Intel and Micron, has developed an 8G-bit SLC (single-level cell) high-speed NAND chip which can reach read speeds up to 200M bytes per second. This enables writing speeds of up to 100M bytes per second, bringing about faster data transfers between devices like solid-state drives and video cards.

Conventional NAND flash memory from Micron and other players presently have transfer data at read rates of 40M bytes per second. Write rates are about 20M bytes per second.

The faster flash's architecture achieves the speed defined in the ONFI (Open NAND Flash Interface) 2.0 specification. Industry players and analysts say products based on the ONFI 2.0 specification have been under development and were expected.

Micron is currently sampling the high-speed NAND component and mass production is expected to start in the second half of 2008. The technology is expected to be put to future use in video and high-end photography devices that require flash memory with quick transfer speeds and reliable data retention.

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